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| 2SC5060 Transistors Power transistor (9010V, 3A) 2SC5060 Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to "L" loads. 4) Darlington connection for high DC current gain. 5) Built-in resistor between base and emitter. 6) Built-in damper diode. External dimensions (Unit : mm) 6.8 2.5 0.65Max. 1.0 0.5 2.54 2.54 0.9 (1) (2) (3) 1.05 14.5 4.4 0.45 Equivalent circuit C Taping specifications ROHM : ATV (1) Emitter (2) Collector (3) Base B R1 B : Base C : Collector E : Emitter R2 E R1 R2 3k 1k Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 9010 9010 6 1 2 1 150 -55 to +150 Unit V V V A(DC) A(Pulse) W C C Collector current Collector power dissipation Junction temperature Storage temperature 1 2 1 Single pulse Pw=10ms 2 Printed circuit board : 1.7 mm thick, collector copper plating at least 100mm2. Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SC5060 ATV M TV2 2500 Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output capacitance Turn-on time Storage time Fall time Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton tstg tf Min. 80 80 6 - - 1000 - - - - - - - Typ. - - - - - - - - 80 20 0.2 5 0.6 Max. 100 100 - 10 3 5000 1.5 2 - - - - - Unit V V V A mA - V V MHz pF s s s Conditions IC=50A IC=1mA IE=5mA VCB=70V VEB=5V VCE=3V, IC=0.5A IC/IB=500mA/1mA IC/IB=500mA/1mA VCB=5V, IE=-0.1A, f=30MHz VCE=10V, IE=0A, f=1MHz IC=0.8A, RL=50 IB1= -IB2=8mA VCC 40V 1 1 2 1 Measured using pulse current. 2 Transition frequency of the device. Rev.A 1/3 2SC5060 Transistors Electrical characteristics curves 10 2.0 2.0 VCE=3V COLLECTOR CURRENT : IC (A) Ta=25C 0.7mA COLLECTOR CURRENT : IC (A) 2 1 Ta= 100 C 1.6 0.4 mA 1.6 1m 0.8mA COLLECTOR CURRENT : IC (A) 5 0.9mA 1m A A mA 0.6 mA 0.5 0.7mA 0.5 mA 4mA 0. 0.3m A A 0.2m 0.5 0.2 0.1 0.05 0.02 0.01 0.6 0.8 1.2 0.3mA 0.2mA 1.2 -25C 25C 0.1mA 0.8 0.8 0.1mA 0.4 0.4 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 IB=0mA 0 1 2 3 4 5 0 IB=0mA 0 4 8 12 Ta=25C 16 20 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Ground emitter propagation characteristics Fig.2 Ground emitter output characteristics( ) Fig.3 Ground emitter output characteristics( ) 10k 5k Ta=25C VCE=5V 4V 3V DC CURRENT GAIN : hFE 10k 5k 2k 1k 500 200 100 50 20 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=3V 100 50 20 10 5 2 1 0.5 0.2 0.1 0.01 0.02 0.05 0.1 0.2 0.5 1 Ta=25C DC CURRENT GAIN : hFE 2k 1k 500 200 100 50 20 10 0.01 0.02 0.05 0.1 0.2 0.5 1 2 C 0 10 5C 2 a= C T 5 -2 IC/IB=1000 500 5 10 10 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 2 5 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current( ) Fig.6 Collector-emitter saturation voltage vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VCE(sat) (V) 100 50 20 10 5 2 1 0.5 0.2 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) IC/IB=500 1000 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 Ta=25C f=1MHz IE=0A TURN ON TIME : ton (s) STORAGE TIME : tstg (s) FALL TIME : tf (s) 100 50 20 10 5 IC=100IB1= -100IB2 Ta=25C Ta= -25C 25C 100C -25C 25C 100C 0.05 0.1 0.2 0.5 1 2 5 10 VBE(sat) tstg 2 1 0.5 0.2 0.1 0.01 0.02 tf VCE(sat) 0.1 0.01 0.02 ton 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : IC (A) COLLECTOR TO BASE VOLTAGE : VCB (A) COLLECTOR CURRENT : IC (A) Fig.7 Collector-emitter saturation voltage Base-emitter saturation voltage vs. collector current Fig.8 Collector output capacitance vs. collector-base voltage Fig.9 Switching characteristics Rev.A 2/3 2SC5060 Transistors 10 5 2 1 500m 200m 100m 50m COLLECTOR CURRENT : IC (A) IC(MAX) (Pulse) DC RL=50 ms =1 ms Pw 10 ms 0 10 VIN +VBB IB1 IC T.U.T IB2 PW PW ~ 50 S - Duty cycle 1% VCC ~ 40V - Ta=25C Single 20m nonrepetitive 10m pulse 0.1 0.2 0.5 1 2 5 10 20 50 100 -VBB COLLECTOR TO EMITTER VOLTAGE : VCE (V) IB1 Base current waveform IB2 Fig.10 Safe operating area 90% Collector current waveform IC 10% ton tstg tf Fig.11 Switching time mesurement circuit Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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